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| PTF10019 MOS FIELD EFFECT TRANSISTOR DESCRIPTION: The ASI PTF10019 is Designed for Cellular, GSM, and D-AMPS applicarions from 860 tp 960 MHz. PACKAGE STYLE FEATURES: * 70 W, 860-960 MHz * Internally matched * OmnigoldTM Metalization System * Silicon Nitride Passivated MAXIMUM RATINGS VDSS VGS PDISS TJ TSTG JC 65 V 20 V 215 W @ TC = 25 C -40 C to +200 C -40 C to +150 C 0.8 C/W 1 = DRAIN 2 = GATE 3 = SOURCE CHARACTERISTICS SYMBOL V(BR)DSS IDSS VGS(th) Gfs PG C P-1dB VGS = 0 v VDS = 26 V VDS = 10 V VDS = 10 V TC = 25 C NONETEST CONDITIONS ID = 25 mA ID = 75 mA ID = 3.0 A POUT = 70 W IDQ = 600 mA MINIMUM TYPICAL MAXIMUM 65 1.0 3.0 3.0 13.0 45 70 14.5 50 75 10:1 5.0 UNITS V mA V Siemens dB % W --- VDD = 28 V f = 960 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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